Product Datasheet Search Results:
4 Pages, 106 KB, Original- AP1001BSQ
- Advanced Power Electronics Corp. Usa
- 15 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
A-power.com.tw/AP1001BSQ
{"Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"28.8 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0060 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"25 V","Tran...
1535 Bytes - 04:15:35, 29 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 7BG9AP1001.pdf | 0.04 | 1 | Request | |
| 7BG2AP1001ZP.pdf | 0.04 | 1 | Request | |
| 7BG9AP1001A01.pdf | 0.04 | 1 | Request | |
| 7BL5AP1001A01.pdf | 0.04 | 1 | Request | |
| 7BL5AP1001.pdf | 0.06 | 1 | Request |
