Product Datasheet Search Results:
4 Pages, 97 KB, Original- AP0903GM
- Advanced Power Electronics Corp. Usa
- 13.3 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 61 KB, Original- AP0903GMA
- Advanced Power Electronics Corp. Usa
- 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 96 KB, Original- AP0903GM-HF
- Advanced Power Electronics Corp. Usa
- 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
A-power.com.tw/AP0903GM
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"13.3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0085 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","T...
1487 Bytes - 12:32:58, 25 November 2024
A-power.com.tw/AP0903GMA
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"45 W","Avalanche Energy Rating (Eas)":"29 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"60 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0090 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"195 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1557 Bytes - 12:32:58, 25 November 2024
A-power.com.tw/AP0903GM-HF
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"HALOGEN FREE AND ROHS COMPLIANT, SOP-8","Pulsed Drain Current-Max (IDM)":"50 A","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Style":"SMALL OUTLINE","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Ty...
1480 Bytes - 12:32:58, 25 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 4GAAHAAP090000X.pdf | 0.04 | 1 | Request | |
| 4GAAHAAP0900L2X.pdf | 0.06 | 1 | Request | |
| 4GAAHAAP0900L20.pdf | 0.04 | 1 | Request | |
| 4GAAHAAP0900000.pdf | 0.04 | 1 | Request |
