Product Datasheet Search Results:

AP02N60I.pdf6 Pages, 79 KB, Original
AP02N60I.pdf7 Pages, 107 KB, Original
AP02N60I
Advanced Power Electronics Corp. Usa
2 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP02N60I-A.pdf5 Pages, 98 KB, Original
AP02N60I-A
Advanced Power Electronics Corp. Usa
2 A, 650 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Product Details Search Results:

A-power.com.tw/AP02N60I
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"80 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3.6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Tran...
1508 Bytes - 08:25:56, 29 November 2024
A-power.com.tw/AP02N60I-A
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"80 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3.6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"650 V","Tran...
1520 Bytes - 08:25:56, 29 November 2024

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