Product Datasheet Search Results:

AP02N60H.pdf4 Pages, 101 KB, Original
AP02N60H
Advanced Power Electronics Corp. Usa
1.6 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP02N60H-H.pdf6 Pages, 244 KB, Original
AP02N60H-H
Advanced Power Electronics Corp. Usa
1.4 A, 700 V, 8.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

Product Details Search Results:

A-power.com.tw/AP02N60H
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"64 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Transis...
1491 Bytes - 01:08:18, 25 November 2024
A-power.com.tw/AP02N60H-H
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"49 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8.8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"5.6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"700 V","Tra...
1505 Bytes - 01:08:18, 25 November 2024

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