Product Datasheet Search Results:

AP02N40H.pdf4 Pages, 98 KB, Original
AP02N40H
Advanced Power Electronics Corp. Usa
1.6 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP02N40H-HF.pdf4 Pages, 99 KB, Original
AP02N40H-HF
Advanced Power Electronics Corp. Usa
1.6 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

Product Details Search Results:

A-power.com.tw/AP02N40H
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"5 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"400 V","Transist...
1514 Bytes - 22:06:44, 24 November 2024
A-power.com.tw/AP02N40H-HF
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"5 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"400 V","Transist...
1523 Bytes - 22:06:44, 24 November 2024

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