AP9563GH
26 A, 40 V, 0.04 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252

From Advanced Power Electronics Corp. USA

StatusACTIVE
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min40 V
Drain Current-Max (ID)26 A
Drain-source On Resistance-Max0.0400 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionROHS COMPLIANT PACKAGE-3
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)64 A
Surface MountYes
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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