AP9452AGG-HF 20 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
From Advanced Power Electronics Corp. USA
Status | ACTIVE |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 20 V |
Drain-source On Resistance-Max | 0.0500 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Power Dissipation Ambient-Max | 1.25 W |
Pulsed Drain Current-Max (IDM) | 12 A |
Surface Mount | Yes |
Terminal Form | FLAT |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |