AP9452AGG-HF
20 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET

From Advanced Power Electronics Corp. USA

StatusACTIVE
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min20 V
Drain-source On Resistance-Max0.0500 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionHALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max1.25 W
Pulsed Drain Current-Max (IDM)12 A
Surface MountYes
Terminal FormFLAT
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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