AP9431GH-HF
23.5 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

From Advanced Power Electronics Corp. USA

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min55 V
Drain Current-Max (ID)23.5 A
Drain-source On Resistance-Max0.0240 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionHALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max2.4 W
Pulsed Drain Current-Max (IDM)70 A
Surface MountYes
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links