AP6950GYT-HF 21 A, 30 V, 0.018 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
From Advanced Power Electronics Corp. USA
Status | ACTIVE |
Case Connection | DRAIN SOURCE |
Channel Type | N-CHANNEL |
Configuration | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (ID) | 21 A |
Drain-source On Resistance-Max | 0.0180 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8 |
Number of Elements | 2 |
Number of Terminals | 8 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | SQUARE |
Package Style | SMALL OUTLINE |
Pulsed Drain Current-Max (IDM) | 40 A |
Surface Mount | Yes |
Terminal Form | NO LEAD |
Terminal Position | DUAL |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |