AP4002P
2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

From Advanced Power Electronics Corp. USA

StatusACTIVE
Avalanche Energy Rating (Eas)20 mJ
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600 V
Drain Current-Max (ID)2 A
Drain-source On Resistance-Max5 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionROHS COMPLIANT, TO-220, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)8 A
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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