AP30P10GP-HF 25 A, 100 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
From Advanced Power Electronics Corp. USA
Status | ACTIVE |
Channel Type | P-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 25 A |
Drain-source On Resistance-Max | 0.0800 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | HALOGEN FREE AND ROHS COMPLIANT,TO-220, 3 PIN |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Power Dissipation Ambient-Max | 89 W |
Pulsed Drain Current-Max (IDM) | 80 A |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |