AP2609GYT-HF 20 V, 0.018 ohm, P-CHANNEL, Si, POWER, MOSFET
From Advanced Power Electronics Corp. USA
| Status | ACTIVE |
| Channel Type | P-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 20 V |
| Drain-source On Resistance-Max | 0.0180 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | 3 X 3 MM, 1 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8 |
| Number of Elements | 1 |
| Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE |
| Package Style | SMALL OUTLINE |
| Power Dissipation Ambient-Max | 3.57 W |
| Pulsed Drain Current-Max (IDM) | 40 A |
| Surface Mount | Yes |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
