AP03N40AP-HF
2.7 A, 400 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

From Advanced Power Electronics Corp. USA

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min400 V
Drain Current-Max (ID)2.7 A
Drain-source On Resistance-Max2.6 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionHALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Power Dissipation Ambient-Max2 W
Pulsed Drain Current-Max (IDM)10 A
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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