Dla.mil/1N4565A+JAN
{"Z(z) Max. (Ohms) Dyn. Imped.":"200","V(Z) Nom.(V) Reference Voltage":"6.4","Package":"DO-7","Temp.Coef. (pp\/10,000) Max.":"1.0","Tolerance (%)":"5.0","P(D) Max.(W) Power Dissipation":"400m","@I(Z) (A) (Test Condition)":"500u","Military":"Y","Mil Number":"JAN1N4565A"}...
808 Bytes - 14:05:29, 21 June 2024
Dla.mil/1N4565A+JANTX
{"Z(z) Max. (Ohms) Dyn. Imped.":"200","V(Z) Nom.(V) Reference Voltage":"6.4","Package":"DO-7","Temp.Coef. (pp\/10,000) Max.":"1.0","Tolerance (%)":"5.0","P(D) Max.(W) Power Dissipation":"400m","@I(Z) (A) (Test Condition)":"500u","Military":"Y","Mil Number":"JANTX1N4565A"}...
821 Bytes - 14:05:29, 21 June 2024
Dla.mil/1N4565A+JANTXV
{"Z(z) Max. (Ohms) Dyn. Imped.":"200","V(Z) Nom.(V) Reference Voltage":"6.4","Package":"DO-7","Temp.Coef. (pp\/10,000) Max.":"1.0","Tolerance (%)":"5.0","P(D) Max.(W) Power Dissipation":"400m","@I(Z) (A) (Test Condition)":"500u","Military":"Y","Mil Number":"JANTXV1N4565A"}...
827 Bytes - 14:05:29, 21 June 2024
Dla.mil/1N5665A+JAN
{"V(RWM) (V) Work.Pk.Rev.Voltage":"171","Semiconductor Material":"Silicon","Package":"DO-13","t(resp) Max.(s) Response Time":"1.0p","V(C) Nom. (V) Clamping Voltage":"274","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"200","I(RM) Max.(A) Reverse Current":"5.0u","Military":"Y","Mil Number":"JAN1N5665A","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"5.5"}...
934 Bytes - 14:05:29, 21 June 2024
Dla.mil/1N5665A+JANTX
{"V(RWM) (V) Work.Pk.Rev.Voltage":"171","Semiconductor Material":"Silicon","Package":"DO-13","t(resp) Max.(s) Response Time":"1.0p","V(C) Nom. (V) Clamping Voltage":"274","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"200","I(RM) Max.(A) Reverse Current":"5.0u","Military":"Y","Mil Number":"JANTX1N5665A","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"5.5"}...
946 Bytes - 14:05:29, 21 June 2024
Dla.mil/1N5665A+JANTXV
{"V(RWM) (V) Work.Pk.Rev.Voltage":"171","Semiconductor Material":"Silicon","Package":"DO-13","t(resp) Max.(s) Response Time":"1.0p","V(C) Nom. (V) Clamping Voltage":"274","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"200","I(RM) Max.(A) Reverse Current":"5.0u","Military":"Y","Mil Number":"JANTXV1N5665A","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"5.5"}...
950 Bytes - 14:05:29, 21 June 2024
Dla.mil/1N6065A+JAN
{"V(RWM) (V) Work.Pk.Rev.Voltage":"100","Semiconductor Material":"Silicon","Package":"DO-13","t(resp) Max.(s) Response Time":"5.0n","V(C) Nom. (V) Clamping Voltage":"168","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"120","I(RM) Max.(A) Reverse Current":"5.0u","Military":"Y","Mil Number":"JAN1N6065A","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"8.9"}...
933 Bytes - 14:05:29, 21 June 2024
Dla.mil/1N6065A+JANTX
{"V(RWM) (V) Work.Pk.Rev.Voltage":"100","Semiconductor Material":"Silicon","Package":"DO-13","t(resp) Max.(s) Response Time":"5.0n","V(C) Nom. (V) Clamping Voltage":"168","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"120","I(RM) Max.(A) Reverse Current":"5.0u","Military":"Y","Mil Number":"JANTX1N6065A","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"8.9"}...
945 Bytes - 14:05:29, 21 June 2024
Dla.mil/1N6065A+JANTXV
{"V(RWM) (V) Work.Pk.Rev.Voltage":"100","Semiconductor Material":"Silicon","Package":"DO-13","t(resp) Max.(s) Response Time":"5.0n","V(C) Nom. (V) Clamping Voltage":"168","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"120","I(RM) Max.(A) Reverse Current":"5.0u","Military":"Y","Mil Number":"JANTXV1N6065A","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"8.9"}...
951 Bytes - 14:05:29, 21 June 2024
Dla.mil/1N6165A+JAN
{"V(RWM) (V) Work.Pk.Rev.Voltage":"69","Semiconductor Material":"Silicon","Package":"DO-204AE","V(C) Nom. (V) Clamping Voltage":"125","P(D) Max.(W) Power Dissipation":"5","V(BR) Nom.(V)Rev.Break.Voltage":"91","Military":"Y","Mil Number":"JAN1N6165A","@I(R) (A) (Test Condition)":"15m","@I(PP) (A) (Test Condition)":"12.0"}...
854 Bytes - 14:05:29, 21 June 2024
Dla.mil/1N6165A+JANTX
{"V(RWM) (V) Work.Pk.Rev.Voltage":"69","Semiconductor Material":"Silicon","Package":"DO-204AE","V(C) Nom. (V) Clamping Voltage":"125","P(D) Max.(W) Power Dissipation":"5","V(BR) Nom.(V)Rev.Break.Voltage":"91","Military":"Y","Mil Number":"JANTX1N6165A","@I(R) (A) (Test Condition)":"15m","@I(PP) (A) (Test Condition)":"12.0"}...
865 Bytes - 14:05:29, 21 June 2024
Dla.mil/1N6165A+JANTXV
{"V(RWM) (V) Work.Pk.Rev.Voltage":"69","Semiconductor Material":"Silicon","Package":"DO-204AE","V(C) Nom. (V) Clamping Voltage":"125","P(D) Max.(W) Power Dissipation":"5","V(BR) Nom.(V)Rev.Break.Voltage":"91","Military":"Y","Mil Number":"JANTXV1N6165A","@I(R) (A) (Test Condition)":"15m","@I(PP) (A) (Test Condition)":"12.0"}...
871 Bytes - 14:05:29, 21 June 2024
Microsemi.com/1N6165A+JANTX
{"Polarity":"Bi-Directional","Clamping Voltage":"125.1 V","Test Current (It)":"15 mA","Reverse Breakdown Voltage":"86.5 V","Mounting":"Through Hole","Rad Hardened":"Yes","Leakage Current (Max)":"0.005 uA","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"Case G","Peak Pulse Power Dissipation":"1500 W","Peak Pulse Current":"12 A","Reverse Stand-off Voltage ":"69.2 V","Pin Count":"2","Number of Elements":"1"}...
1468 Bytes - 14:05:29, 21 June 2024