Did you mean: 2N341+JAN
Product Datasheet Search Results:
- 1N6341+JAN
- Defense Electronics Supply Center
- 51V, 500mWt General purpose voltage reference/regulator diode
- 1N6341+JANTX
- Defense Electronics Supply Center
- 51V, 500mWt General purpose voltage reference/regulator diode
- 1N6341+JANTXV
- Defense Electronics Supply Center
- 51V, 500mWt General purpose voltage reference/regulator diode
- 1N6641+JANS
- Defense Electronics Supply Center
- 300mA Iout, 75V Vrrm Fast Recovery Rectifier
- 1N6641+JANTX
- Defense Electronics Supply Center
- 300mA Iout, 75V Vrrm Fast Recovery Rectifier
- 1N6641+JANTXV
- Defense Electronics Supply Center
- 300mA Iout, 75V Vrrm Fast Recovery Rectifier
Product Details Search Results:
Dla.mil/1N6141+JAN
{"V(RWM) (V) Work.Pk.Rev.Voltage":"6.9","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"14","t(resp) Max.(s) Response Time":"5n","Package":"DO-204AE","V(BR) Max.(V)Breakdown Voltage":"10","P(D) Max.(W) Power Dissipation":"5","V(BR) Nom.(V)Rev.Break.Voltage":"9.1","V(BR) Min.(V)Breakdown Voltage":"8.19","Military":"Y","Mil Number":"JAN1N6141","@I(R) (A) (Test Condition)":"150m","@I(PP) (A) (Test Condition)":"107","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...
1003 Bytes - 08:10:25, 17 November 2024
Dla.mil/1N6141+JANTX
{"V(RWM) (V) Work.Pk.Rev.Voltage":"6.9","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"14","t(resp) Max.(s) Response Time":"5n","Package":"DO-204AE","V(BR) Max.(V)Breakdown Voltage":"10","P(D) Max.(W) Power Dissipation":"5","V(BR) Nom.(V)Rev.Break.Voltage":"9.1","V(BR) Min.(V)Breakdown Voltage":"8.19","Military":"Y","Mil Number":"JANTX1N6141","@I(R) (A) (Test Condition)":"150m","@I(PP) (A) (Test Condition)":"107","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...
1015 Bytes - 08:10:25, 17 November 2024
Dla.mil/1N6141+JANTXV
{"V(RWM) (V) Work.Pk.Rev.Voltage":"6.9","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"14","t(resp) Max.(s) Response Time":"5n","Package":"DO-204AE","V(BR) Max.(V)Breakdown Voltage":"10","P(D) Max.(W) Power Dissipation":"5","V(BR) Nom.(V)Rev.Break.Voltage":"9.1","V(BR) Min.(V)Breakdown Voltage":"8.19","Military":"Y","Mil Number":"JANTXV1N6141","@I(R) (A) (Test Condition)":"150m","@I(PP) (A) (Test Condition)":"107","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...
1022 Bytes - 08:10:25, 17 November 2024
Dla.mil/1N6341+JAN
{"Z(z) Max. (Ohms) Dyn. Imped.":"85","V(Z) Nom.(V) Reference Voltage":"51","Package":"Axial-4","Temp.Coef. (pp/10,000) Max.":"9.6","P(D) Max.(W) Power Dissipation":"500m","@I(Z) (A) (Test Condition)":"2.5m","Military":"Y","Mil Number":"JAN1N6341"}...
782 Bytes - 08:10:25, 17 November 2024
Dla.mil/1N6341+JANTX
{"Z(z) Max. (Ohms) Dyn. Imped.":"85","V(Z) Nom.(V) Reference Voltage":"51","Package":"Axial-4","Temp.Coef. (pp/10,000) Max.":"9.6","P(D) Max.(W) Power Dissipation":"500m","@I(Z) (A) (Test Condition)":"2.5m","Military":"Y","Mil Number":"JANTX1N6341"}...
794 Bytes - 08:10:25, 17 November 2024
Dla.mil/1N6341+JANTXV
{"Z(z) Max. (Ohms) Dyn. Imped.":"85","V(Z) Nom.(V) Reference Voltage":"51","Package":"Axial-4","Temp.Coef. (pp/10,000) Max.":"9.6","P(D) Max.(W) Power Dissipation":"500m","@I(Z) (A) (Test Condition)":"2.5m","Military":"Y","Mil Number":"JANTXV1N6341"}...
800 Bytes - 08:10:25, 17 November 2024
Dla.mil/1N6641+JANS
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"2.5","I(O) Max.(A) Output Current":"300m","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"10m","V(FM) Max.(V) Forward Voltage":"1.1","@Temp. (°C) (Test Condition)":"150","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"75","Package":"DO-35","I(RM) Max.(A) Pk. Rev. Current":"100u","@I(F) (A) (Test Condition)":"10m","Military":"Y","Mil Number":"JANS1N6641","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"5.0n","I(RM) M...
1108 Bytes - 08:10:25, 17 November 2024
Dla.mil/1N6641+JANTX
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"2.5","I(O) Max.(A) Output Current":"300m","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"10m","V(FM) Max.(V) Forward Voltage":"1.1","@Temp. (°C) (Test Condition)":"150","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"75","Package":"DO-35","I(RM) Max.(A) Pk. Rev. Current":"100u","@I(F) (A) (Test Condition)":"10m","Military":"Y","Mil Number":"JANTX1N6641","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"5.0n","I(RM) ...
1114 Bytes - 08:10:25, 17 November 2024
Dla.mil/1N6641+JANTXV
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"2.5","I(O) Max.(A) Output Current":"300m","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"10m","V(FM) Max.(V) Forward Voltage":"1.1","@Temp. (°C) (Test Condition)":"150","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"75","Package":"DO-35","I(RM) Max.(A) Pk. Rev. Current":"100u","@I(F) (A) (Test Condition)":"10m","Military":"Y","Mil Number":"JANTXV1N6641","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"5.0n","I(RM)...
1120 Bytes - 08:10:25, 17 November 2024
Dla.mil/2N1041+JAN
{"@I(C) (A) (Test Condition)":"50m","V(CE)sat Max.(V)":".25","I(CBO) Max. (A)":"125u","Absolute Max. Power Diss. (W)":"20","I(C) Abs.(A) Collector Current":"3.0","h(FE) Max. Current gain.":"200","h(FE) Min. Static Current Gain":"33","@V(CE) (V) (Test Condition)":".50","@I(B) (A) (Test Condition)":"100m","V(BR)CEO (V)":"60","@V(CBO) (V) (Test Condition)":"50","Military":"Y","V(BR)CBO (V)":"100","Package":"TO-11var","Mil Number":"JAN2N1041"}...
952 Bytes - 08:10:25, 17 November 2024
Dla.mil/2N341+JAN
{"@I(C) (A) (Test Condition)":"40m","V(CE)sat Max.(V)":"8.0","I(CBO) Max. (A)":"1.0u","Absolute Max. Power Diss. (W)":"1.0","I(C) Abs.(A) Collector Current":"60m","h(FE) Min. Static Current Gain":"20","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"3.0m","V(BR)CEO (V)":"85","@V(CBO) (V) (Test Condition)":"30","Military":"Y","V(BR)CBO (V)":"125","Package":"TO-11","Mil Number":"JAN2N341"}...
910 Bytes - 08:10:25, 17 November 2024
Dla.mil/2N3441+JAN
{"@I(C) (A) (Test Condition)":"500m","V(CE)sat Max.(V)":"6.0","I(CBO) Max. (A)":"5.0m","Absolute Max. Power Diss. (W)":"25","I(C) Abs.(A) Collector Current":"3.0","h(FE) Max. Current gain.":"800","h(FE) Min. Static Current Gain":"20","@V(CE) (V) (Test Condition)":"4.0","@I(B) (A) (Test Condition)":"900m","V(BR)CEO (V)":"140","@V(CBO) (V) (Test Condition)":"140","Military":"Y","V(BR)CBO (V)":"160","Package":"TO-66","Mil Number":"JAN2N3441"}...
952 Bytes - 08:10:25, 17 November 2024
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OPERATING_INSTRUCTION_RHDE250_RHDE500_RHDE800_RHDE1250_RHDE2500_RHDE4000_CONTRAC_ELECTRICAL_ROTARY_ACTUATOR_EXPLOSION_PROOF_DESIGN.pdf | 1.57 | 1 | Request | |
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