Product Datasheet Search Results:
6 Pages, 218 KB, Original- 2SK4207(Q)
- Toshiba
- Trans MOSFET N-CH Si 900V 13A 3-Pin(3+Tab) TO-3PN
Product Details Search Results:
Toshiba.co.jp/2SK4207
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"491 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"13 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"39 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"900 V"...
1515 Bytes - 09:44:32, 28 November 2024
Toshiba.co.jp/2SK4207(Q)
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"13(A)","Mounting":"Through Hole","Drain-Source On-Volt":"900(V)","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-3PN","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1449 Bytes - 09:44:32, 28 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK4207.pdf | 0.21 | 1 | Request |
