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2SK4040-01.pdf19 Pages, 332 KB, Original

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Fujielectric.co.jp/2SK4040-01
{"Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"539 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"17 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"68 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"450 V","Transistor Application":"S...
1454 Bytes - 09:43:13, 28 November 2024

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