Datasheet.Directory

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.16 W","Avalanche Energy Rating (Eas)":"487 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"2.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vol...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.67 W","Avalanche Energy Rating (Eas)":"719 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.58 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.67 W","Avalanche Energy Rating (Eas)":"719 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.58 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.67 W","Avalanche Energy Rating (Eas)":"719 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.58 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...

{"C(iss) Max. (F)":"750p","Absolute Max. Power Diss. (W)":"100","g(fs) Max, (S) Trans. conduct,":"1.8","r(DS)on Max. (Ohms)":"0.7","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"1.0u","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"4.0","@(VDS) (V) (Test Condition)":"20","Package":"TO-247var","I(DSS) Min. (A)":"1.0m","Military":"N","t(r) Max. (s) Rise time":"25n","V(BR)DSS (V)":"200","t(f) Max. (s) Fall time.":"40n","g(fs) Min. (S) Trans. conduct.":"1.0","I(D) Abs. Drain Current (A)":"8.0"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Typical Rise Time":"25 ns","Typical Turn-Off Delay Time":"70 ns","Description":"Value","Maximum Continuous Drain Current":"8 A","Package":"3TO-3P","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"15 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"0.7@15V Ohm","Manufacturer":"Renesas Electronics","Typical Fall Time":"40 ns"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"93 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"8 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMIC...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"2(A)","Mounting":"Through Hole","Drain-Source On-Volt":"600(V)","Pin Count":"3 +Tab","Packaging":"Bag","Power Dissipation":"20(W)","Operating Temp Range":"-55C to 150C","Package Type":"PW-Mold2","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"5(ohm)","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd30 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3 A","Mounting":"Through Hole","Drain-Source On-Volt":"600 V","Pin Count":"3 +Tab","Power Dissipation":"20 W","Operating Temp Range":"-55C to 150C","Package Type":"PW-Mold2","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"2.2 ohm","Number of Elements":"1"}...