Product Datasheet Search Results:

2SK3987-01S.pdf4 Pages, 306 KB, Original
2SK3987-01SJ.pdf4 Pages, 306 KB, Original

Product Details Search Results:

Fujielectric.co.jp/2SK3987-01S
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"228 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"2.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14.4 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...
1559 Bytes - 05:13:14, 01 December 2024
Fujielectric.co.jp/2SK3987-01SJ
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"228 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"2.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14.4 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...
1575 Bytes - 05:13:14, 01 December 2024

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