Datasheet.Directory

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.16 W","Avalanche Energy Rating (Eas)":"301 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"320 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTO...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.16 W","Avalanche Energy Rating (Eas)":"320 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTO...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"211 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"17.2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-126ML, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Drain Current-Max (ID)":"10 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RE...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"48 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0075 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"25...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"48 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0075 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"25 V"...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"64 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0056 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"25...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"64 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0056 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICON...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"64 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0056 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"25 V"...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"64 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0056 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"20(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"600(V)","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-3PN","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...