Datasheet.Directory

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"1206 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"92 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0260 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"368 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICON...

{"Category":"Power MOSFET","Dimensions":"15.5 x 5 x 21.5 mm","Maximum Continuous Drain Current":"92 A","Width":"5 mm","Maximum Drain Source Voltage":"150 V","Package Type":"TO-247","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"80 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"40 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"3800 pF @ 75 V","Length":"15.5 mm","Pin...