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2SK3774-01S.pdf4 Pages, 150 KB, Original
2SK3774-01SJ.pdf4 Pages, 150 KB, Original

Product Details Search Results:

Fujielectric.co.jp/2SK3774-01S
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"597 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"32 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"128 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...
1513 Bytes - 04:45:51, 28 November 2024
Fujielectric.co.jp/2SK3774-01SJ
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"597 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"32 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"128 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...
1520 Bytes - 04:45:51, 28 November 2024

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