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2SK3771-01MR.pdf4 Pages, 99 KB, Original

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Fujielectric.co.jp/2SK3771-01MR
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.16 W","Avalanche Energy Rating (Eas)":"376 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"29 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0590 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"116 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICON...
1559 Bytes - 04:37:41, 28 November 2024

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