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2SK3681-01.pdf4 Pages, 119 KB, Original

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Fujielectric.co.jp/2SK3681-01
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-247, 3 PIN","Pulsed Drain Current-Max (IDM)":"172 A","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Drain Current-Max (ID)":"43 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL ...
1472 Bytes - 15:21:34, 20 February 2025
Fuji_semiconductor/2SK3681-01
{"Category":"Power MOSFET","Dimensions":"15.5 x 5 x 21.5 mm","Maximum Continuous Drain Current":"\u00b143 A","Width":"5 mm","Maximum Drain Source Voltage":"600 V","Package Type":"TO-247","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"112 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"80 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"5360 pF @ 25 V","Length":"15.5 m...
2198 Bytes - 15:21:34, 20 February 2025

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