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2SK3676-01SJ.pdf4 Pages, 268 KB, Original

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Fujielectric.co.jp/2SK3676-01SJ
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.67 W","Avalanche Energy Rating (Eas)":"244 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"2.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
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