Datasheet.Directory

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"270 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"28 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...

{"Category":"Power MOSFET","Dimensions":"15.5 x 5 x 21.5\n \n mm","Maximum Continuous Drain Current":"\u00b17\n \n A","Width":"5\n \n mm","Maximum Drain Source Voltage":"900\n \n V","Package Type":"TO-247","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150\n \n \u00b0C","Typical Gate Charge @ Vgs":"25 nC @ 10 V","Operating Temperature Range":"-55 to +150\n \n \u00b0C","Typical Turn On Delay Time":"22\n \n ns","Channel Type":"N","Typical Input Capacitance @ Vds":...