Product Datasheet Search Results:
4 Pages, 118 KB, Original- 2SK3651-01R
- Fuji Electric
- 2SK3651-01R
Product Details Search Results:
Fujielectric.co.jp/2SK3651-01R
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"3.1 W","Avalanche Energy Rating (Eas)":"372 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"25 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1496 Bytes - 01:12:05, 01 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK3651-01R.pdf | 0.11 | 1 | Request |
