Product Datasheet Search Results:
4 Pages, 94 KB, Original- 2SK3647-01
- Fuji Electric
- 2SK3647-01
Product Details Search Results:
Fujielectric.co.jp/2SK3647-01
{"Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"2.4 W","Avalanche Energy Rating (Eas)":"278 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0440 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...
1535 Bytes - 00:53:50, 01 December 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK3647-01.pdf | 0.09 | 1 | Request |
