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2SK3589-01.pdf4 Pages, 93 KB, Original

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Fujielectric.co.jp/2SK3589-01
{"Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"2.4 W","Avalanche Energy Rating (Eas)":"319 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"292 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
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