Datasheet.Directory

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"465 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"50 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"200 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICON...

{"Category":"Power MOSFET","Maximum Drain Source Voltage":"100 V","Typical Gate Charge @ Vgs":"52 nC @ 10 V","Dimensions":"10 x 4.5 x 15 mm","Channel Mode":"Enhancement","Maximum Power Dissipation":"270 W","Typical Turn On Delay Time":"20 ns","Channel Type":"N","Length":"10 mm","Package Type":"TO-220AB","Number of Elements per Chip":"1","Maximum Continuous Drain Current":"\u00b173 A","Mounting Type":"Through Hole","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Pin Count":"3","Forwa...