Product Details Search Results:
Toshiba.co.jp/2SK3544
{"Terminal Finish":"TIN LEAD","Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"350 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"13 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"52 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Brea...
1556 Bytes - 23:57:49, 30 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK3544.pdf | 0.17 | 1 | Request |
