Product Datasheet Search Results:
3 Pages, 197 KB, Original- 2SK3498(2-7B1B)
- Toshiba America Electronic Components, Inc.
- 1 A, 450 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Toshiba.co.jp/2SK3498(2-7B1B)
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"113 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...
1568 Bytes - 11:01:08, 19 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK3498.pdf | 0.20 | 1 | Request |
