Product Datasheet Search Results:

2SK3376MFV.pdf6 Pages, 139 KB, Original
2SK3376MFV
Toshiba America Electronic Components, Inc.
0.24 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK3376MFV-A.pdf6 Pages, 154 KB, Original
2SK3376MFV-B.pdf6 Pages, 154 KB, Original
2SK3376MFV-BK.pdf6 Pages, 154 KB, Original
2SK3376MFV-C.pdf6 Pages, 154 KB, Original

Product Details Search Results:

Toshiba.co.jp/2SK3376MFV
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"2.40E-4 A","Transistor Element Material":"SILICON","Number of Elements":"1","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SINGLE WITH BUILT-IN DIODE AND RESISTOR","Number of Terminals":"3","Surface Mount":"Yes"}...
1253 Bytes - 18:08:10, 27 November 2024
Toshiba.co.jp/2SK3376MFV-A
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-1L1C, VESM, 3 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"2.40E-4 A","Transistor Element Material":"SILICON","Number of Elements":"1","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SINGLE WITH BUILT-IN DIODE AND RESISTOR",...
1312 Bytes - 18:08:10, 27 November 2024
Toshiba.co.jp/2SK3376MFV-B
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-1L1C, VESM, 3 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"3.40E-4 A","Transistor Element Material":"SILICON","Number of Elements":"1","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SINGLE WITH BUILT-IN DIODE AND RESISTOR",...
1312 Bytes - 18:08:10, 27 November 2024
Toshiba.co.jp/2SK3376MFV-BK
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-1L1C, VESM, 3 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"3.90E-4 A","Transistor Element Material":"SILICON","Number of Elements":"1","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SINGLE WITH BUILT-IN DIODE AND RESISTOR",...
1317 Bytes - 18:08:10, 27 November 2024
Toshiba.co.jp/2SK3376MFV-C
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-1L1C, VESM, 3 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"5.20E-4 A","Transistor Element Material":"SILICON","Number of Elements":"1","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SINGLE WITH BUILT-IN DIODE AND RESISTOR",...
1314 Bytes - 18:08:10, 27 November 2024

Documentation and Support

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