Product Datasheet Search Results:
9 Pages, 89 KB, Original- 2SK3150
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
9 Pages, 89 KB, Original- 2SK3150(L)
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
12 Pages, 59 KB, Original- 2SK3150L
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
9 Pages, 89 KB, Original- 2SK3150L-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
9 Pages, 89 KB, Original- 2SK3150(S)
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
12 Pages, 59 KB, Original- 2SK3150S
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
9 Pages, 89 KB, Original- 2SK3150STL-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
1 Pages, 57 KB, Scan- 2SK3150
- Renesas Electronics
- 0.09 ohm, POWER, FET
12 Pages, 59 KB, Original- 2SK3150(L)
- Renesas Electronics
- 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
14 Pages, 76 KB, Original- 2SK3150L
- Renesas Electronics
- 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
11 Pages, 110 KB, Original- 2SK3150L-E
- Renesas Electronics
- 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
12 Pages, 59 KB, Original- 2SK3150(S)
- Renesas Electronics
- 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/2SK3150
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LDPAK-3","Terminal Form":"THROUGH-HOLE","Package Style":"IN-LINE","Drain-source On Resistance-Max":"0.0900 ohm","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Number of Terminals":"3"}...
977 Bytes - 20:04:44, 30 November 2024
Renesas.com/2SK3150(L)
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LDPAK-3","Pulsed Drain Current-Max (IDM)":"80 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"20 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Sh...
1408 Bytes - 20:04:44, 30 November 2024
Renesas.com/2SK3150L
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0850 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor...
1426 Bytes - 20:04:44, 30 November 2024
Renesas.com/2SK3150L-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0850 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...
1485 Bytes - 20:04:44, 30 November 2024
Renesas.com/2SK3150(S)
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0850 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Surfa...
1432 Bytes - 20:04:44, 30 November 2024
Renesas.com/2SK3150S
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0850 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Surfa...
1422 Bytes - 20:04:44, 30 November 2024
Renesas.com/2SK3150S-E
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"20(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Power Dissipation":"50(W)","Operating Temp Range":"-55C to 150C","Package Type":"LDPAK(S)-1","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1480 Bytes - 20:04:44, 30 November 2024
Renesas.com/2SK3150STL-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0850 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...
1529 Bytes - 20:04:44, 30 November 2024
