Product Datasheet Search Results:
9 Pages, 53 KB, Original- 2SK3147L
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
9 Pages, 88 KB, Original- 2SK3147L-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
14 Pages, 75 KB, Original- 2SK3147L
- Renesas Electronics
- 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
11 Pages, 234 KB, Original- 2SK3147L-E
- Renesas Electronics
- 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/2SK3147L
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor ...
1424 Bytes - 02:12:15, 24 November 2024
Renesas.com/2SK3147L-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1481 Bytes - 02:12:15, 24 November 2024
