Product Datasheet Search Results:
9 Pages, 90 KB, Original- 2SK2912(L)
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
12 Pages, 57 KB, Original- 2SK2912(L)
- Renesas Electronics
- 0.04 ohm, POWER, FET
Product Details Search Results:
Renesas.com/2SK2912(L)
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LDPAK-3","Terminal Form":"THROUGH-HOLE","Package Style":"IN-LINE","Drain-source On Resistance-Max":"0.0400 ohm","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Number of Terminals":"3"}...
993 Bytes - 03:15:19, 22 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK2917.pdf | 0.42 | 1 | Request |
