Product Datasheet Search Results:
4 Pages, 328 KB, Original- 2SK2899-01R
- Fuji Electric
- 2SK2899-01R
13 Pages, 489 KB, Scan- 2SK2899-01R
- N/a
- Power MOSFET iso, S-L, 60V 100A, MOS-FET N-Channel enhanced
Product Details Search Results:
Fujielectric.co.jp/2SK2899-01R
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"1268 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"100 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0110 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"400 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 ...
1499 Bytes - 04:46:45, 24 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK2899-01R.pdf | 0.32 | 1 | Request |
