Product Datasheet Search Results:
4 Pages, 306 KB, Original- 2SK2896-01S
- Fuji Electric
- 2SK2896-01S
14 Pages, 483 KB, Scan- 2SK2896-01S
- N/a
- SMD, V-MOS, S-L, 60V 45A, MOS-FET N-Channel enhanced
Product Details Search Results:
Fujielectric.co.jp/2SK2896-01S
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"45 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"180 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Surfa...
1466 Bytes - 04:40:17, 24 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK2896-01S.pdf | 0.30 | 1 | Request |
