Datasheet.Directory

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-3P, 3 PIN","Pulsed Drain Current-Max (IDM)":"80 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"761 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"20 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...

{"Category":"Power MOSFET","Dimensions":"15.5 x 4.5 x 19.5 mm","Maximum Continuous Drain Current":"\u00b120 A","Width":"4.5 mm","Maximum Drain Source Voltage":"500 V","Package Type":"TO-3P","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"20 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"2200 pF @ 25 V","Length":"15.5 mm","Pin Count":"3","Forward Transconducta...