Product Datasheet Search Results:
4 Pages, 137 KB, Original- 2SK2768-01L
- Fuji Electric
- 2SK2768-01L
Product Details Search Results:
Fujielectric.co.jp/2SK2768-01L
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"258 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"900 V","...
1484 Bytes - 05:44:19, 24 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK2768-01L.pdf | 0.13 | 1 | Request |
