Product Datasheet Search Results:
4 Pages, 88 KB, Original- 2SK2762-01S
- Fuji Electric
- 2SK2762-01S
Product Details Search Results:
Fujielectric.co.jp/2SK2762-01S
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"254 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"16 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"800 V","Transis...
1509 Bytes - 20:13:19, 20 April 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK2762-01S.pdf | 0.08 | 1 | Request |
