Product Datasheet Search Results:
4 Pages, 75 KB, Original- 2SK2759-01R
- Fuji Electric Corp. Of America
- 15 A, 500 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Fujielectric.co.jp/2SK2759-01R
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"108 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V"...
1499 Bytes - 02:48:20, 24 November 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK2759-01R.pdf | 0.07 | 1 | Request |
