{"Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Number of Terminals":"3","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-Max":"1 ohm","Package Style":"FLANGE MOUNT","DS Breakdown Vo...