Product Datasheet Search Results:
7 Pages, 38 KB, Original- 2SK1838L
- Renesas Technology / Hitachi Semiconductor
- Silicon N-Channel MOS FET
8 Pages, 82 KB, Original- 2SK1838L-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET
12 Pages, 68 KB, Original- 2SK1838L
- Renesas Electronics
- 1 A, 250 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET
10 Pages, 108 KB, Original- 2SK1838L-E
- Renesas Electronics
- 1 A, 250 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/2SK1838L
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"250 V","Transistor ...
1421 Bytes - 22:12:12, 24 November 2024
Renesas.com/2SK1838L-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1480 Bytes - 22:12:12, 24 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK1830.pdf | 0.27 | 1 | Request |
