Product Datasheet Search Results:
6 Pages, 219 KB, Original- 2SJ668(2-7J1B)
- Toshiba America Electronic Components, Inc.
- 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Toshiba.co.jp/2SJ668(2-7J1B)
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"20 W","Avalanche Energy Rating (Eas)":"40.5 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"P-...
1658 Bytes - 03:21:31, 01 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SJ668.pdf | 0.18 | 1 | Request |
