Product Datasheet Search Results:
8 Pages, 84 KB, Original- 2SJ479(S)
- Renesas Technology / Hitachi Semiconductor
- Silicon P Channel DV-L MOS FET
9 Pages, 42 KB, Original- 2SJ479(S)
- Renesas Electronics
- 0.06 ohm, POWER, FET
Product Details Search Results:
Renesas.com/2SJ479(S)
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LDPAK-3","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Drain-source On Resistance-Max":"0.0600 ohm","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Number of Terminals":"2","Surface Mount":"Yes"}...
1013 Bytes - 04:42:45, 22 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| ERG2SJ471E.pdf | 0.92 | 1 | Request | |
| ERG2SJ471U.pdf | 0.92 | 1 | Request | |
| ERG12SJ472.pdf | 0.92 | 1 | Request | |
| ERG12SJ473.pdf | 0.92 | 1 | Request | |
| ERG12SJ471V.pdf | 0.92 | 1 | Request | |
| ERG12SJ471J.pdf | 0.92 | 1 | Request | |
| ERG2SJ473P.pdf | 0.92 | 1 | Request | |
| ERG2SJ470P.pdf | 0.92 | 1 | Request | |
| ERG2SJ470U.pdf | 0.92 | 1 | Request | |
| ERG12SJ471E.pdf | 0.92 | 1 | Request | |
| ERG2SJ470E.pdf | 0.92 | 1 | Request | |
| ERG2SJ471P.pdf | 0.92 | 1 | Request |
