Product Datasheet Search Results:
- 2SJ479(L)
- Renesas Technology / Hitachi Semiconductor
- Silicon P Channel DV-L MOS FET
- 2SJ479(L)-(S)
- Hitachi Semiconductor
- Silicon P-Channel MOS FET
- 2SJ479(L)/(S)
- Hitachi Semiconductor
- Silicon P-Channel MOS FET
- 2SJ479(L)
- Renesas Electronics
- 0.06 ohm, POWER, FET
Product Details Search Results:
Renesas.com/2SJ479(L)
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LDPAK-3","Terminal Form":"THROUGH-HOLE","Package Style":"IN-LINE","Drain-source On Resistance-Max":"0.0600 ohm","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Number of Terminals":"3"}...
985 Bytes - 03:29:21, 22 November 2024
Documentation and Support
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ERG2SJ471E.pdf | 0.92 | 1 | Request | |
ERG2SJ471U.pdf | 0.92 | 1 | Request | |
ERG12SJ472.pdf | 0.92 | 1 | Request | |
ERG12SJ473.pdf | 0.92 | 1 | Request | |
ERG12SJ471V.pdf | 0.92 | 1 | Request | |
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ERG2SJ473P.pdf | 0.92 | 1 | Request | |
ERG2SJ470P.pdf | 0.92 | 1 | Request | |
ERG2SJ470U.pdf | 0.92 | 1 | Request | |
ERG12SJ471E.pdf | 0.92 | 1 | Request | |
ERG2SJ470E.pdf | 0.92 | 1 | Request | |
ERG2SJ471P.pdf | 0.92 | 1 | Request |