Product Datasheet Search Results:
- 2SJ344(TE85L,F)
- Toshiba
- Trans MOSFET P-CH Si 50V 0.05A 3-Pin USM T/R
Product Details Search Results:
Toshiba.co.jp/2SJ344
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","Configuration":"SINGLE WITH BUILT-IN DIODE AND RESISTOR","Drain-source On Resistance-Max":"50 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...
1498 Bytes - 19:57:39, 23 November 2024
Toshiba.co.jp/2SJ344(TE85L,F)
{"Polarity":"P","Gate-Source Voltage (Max)":"-7(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.05(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"50(V)","Packaging":"Tape and Reel","Power Dissipation":"0.1(W)","Operating Temp Range":"-55C to 150C","Package Type":"USM","Rad Hardened":"No","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...
1460 Bytes - 19:57:39, 23 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
2SJ344.pdf | 0.29 | 1 | Request |