Product Datasheet Search Results:
8 Pages, 82 KB, Original- 2SJ181L
- Renesas Technology / Hitachi Semiconductor
- Silicon P Channel MOS FET
8 Pages, 82 KB, Original- 2SJ181L-E
- Renesas Technology / Hitachi Semiconductor
- Silicon P Channel MOS FET
13 Pages, 64 KB, Original- 2SJ181L
- Renesas Electronics
- 0.5 A, 600 V, 25 ohm, P-CHANNEL, Si, POWER, MOSFET
7 Pages, 104 KB, Original- 2SJ181L(E)
- Renesas Technology
- Trans MOSFET P-CH Si 600V 0.5A 3-Pin(3+Tab) DPAK(L)-(1) Tube
7 Pages, 104 KB, Original- 2SJ181L-E
- Renesas Electronics
- 0.5 A, 600 V, 25 ohm, P-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/2SJ181L
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"25 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"1 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Transistor ...
1415 Bytes - 13:06:55, 11 March 2025
Renesas.com/2SJ181L(E)
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b115(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.5(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"600(V)","Packaging":"Rail/Tube","Power Dissipation":"20(W)","Operating Temp Range":"-55C to 150C","Package Type":"DPAK(L)-(1)","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1516 Bytes - 13:06:55, 11 March 2025
Renesas.com/2SJ181L-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"25 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"1 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1487 Bytes - 13:06:55, 11 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| ERG2SJ181V.pdf | 0.92 | 1 | Request | |
| ERG2SJ181P.pdf | 0.92 | 1 | Request | |
| ERG12SJ181P.pdf | 0.92 | 1 | Request | |
| ERG12SJ181.pdf | 0.92 | 1 | Request | |
| ERG12SJ181J.pdf | 0.92 | 1 | Request | |
| ERG2SJ181U.pdf | 0.92 | 1 | Request | |
| ERG2SJ181E.pdf | 0.92 | 1 | Request | |
| ERG2SJ181.pdf | 0.92 | 1 | Request | |
| ERG12SJ181V.pdf | 0.92 | 1 | Request | |
| ERG2SJ181H.pdf | 0.92 | 1 | Request | |
| ERG12SJ181E.pdf | 0.92 | 1 | Request |
