Product Datasheet Search Results:
8 Pages, 82 KB, Original- 2SJ181L-E
- Renesas Technology / Hitachi Semiconductor
- Silicon P Channel MOS FET
7 Pages, 104 KB, Original- 2SJ181L-E
- Renesas Electronics
- 0.5 A, 600 V, 25 ohm, P-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/2SJ181L-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"25 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"1 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1487 Bytes - 09:50:22, 24 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| ERG12SJ181E.pdf | 0.92 | 1 | Request | |
| ERG12SJ181.pdf | 0.92 | 1 | Request | |
| ERG2SJ181H.pdf | 0.92 | 1 | Request | |
| ERG2SJ181E.pdf | 0.92 | 1 | Request | |
| ERG12SJ181P.pdf | 0.92 | 1 | Request | |
| ERG2SJ181V.pdf | 0.92 | 1 | Request | |
| ERG2SJ181P.pdf | 0.92 | 1 | Request | |
| ERG12SJ181J.pdf | 0.92 | 1 | Request | |
| ERG2SJ181U.pdf | 0.92 | 1 | Request | |
| ERG2SJ181.pdf | 0.92 | 1 | Request | |
| ERG12SJ181V.pdf | 0.92 | 1 | Request |
